Product specification
2SD1757K
Features
Low V
CE(sat)
. (Typ.8mV at I
C
/I
B
= 10/1mA).
Optimal for muting.
+0.1
2.4
-0.1
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
+0.1
1.3
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current *
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
T
stg
Rating
30
15
6.5
0.5
0.2
150
-55 to +150
Unit
V
V
V
A
W
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Output capacitance
Transition frequency
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
I
C
=50ìA
I
C
=1mA
I
E
=50ìA
V
CB
=20V
V
EB
=4V
0.1
120
150
15
Testconditons
Min
30
15
6.5
0.5
0.5
0.4
560
MHz
pF
Typ
Max
Unit
V
V
V
ìA
ìA
V
V
CE(sat)
I
C
/I
B
=500mA/50mA
h
FE
f
T
C
ob
V
CE
=3V, I
C
=100mA
V
CE
=5V, I
E
= -50mA, f=100MHz
V
CB
=10V, I
E
=0A, f=1MHz
h
FE
Classification
Marking
Rank
hFE
Q
120 270
AA
R
180 390
S
270 560
0-0.1
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4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
