SMD Type
Transistors
Product specification
2SD1760
TO-252
+0.15
1.50
-0.15
Unit: mm
2.30
+0.8
0.50
-0.7
+0.1
-0.1
6.50
+0.2
5.30
-0.2
+0.15
-0.15
Features
+0.2
9.70
-0.2
Low V
CE(sat)
, V
CE(sat)
= 0.5V (typical)
(I
C
= 2A, I
B
= 0.2A).
+0.1
0.80
-0.1
+0.15
0.50
-0.15
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse) *
Collector power dissipation
Junction temperature
Storage temperature
* Pw=100ms.
T
c
= 25
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
60
50
5
3
4.5
15
150
-55 to +150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Forward current transfer ratio
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
I
C
=50ìA
I
C
=1mA
I
E
=50ìA
V
CB
=40V
V
EB
=4V
0.5
82
90
40
Testconditons
Min
60
50
5
1
1
1
390
MHz
pF
Typ
Max
Unit
V
V
V
ìA
ìA
V
V
CE(sat)
I
C
=2A,I
B
=0.2A
h
FE
f
T
C
ob
V
CE
=3V,I
C
=0.5A
V
CE
=5V, I
E
= -500mA, f=30MHz
V
CB
=10V, I
E
=0A, f=1MHz
h
FE
Classification
Rank
h
FE
P
82 180
Q
120 270
R
180 390
3
.8
0
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4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
