SMD Type
Transistors
IC
Product specification
2SD1819A
Features
High foward current transfer ratio hFE.
Low collector to emitter saturation voltage V
CE(sat)
.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Rating
60
50
7
200
100
150
150
-55 to +150
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE
Testconditons
V
CB
= 20V, I
E
= 0
V
CE
= 10V, I
B
= 0
I
C
= 10ìA, I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10ìA, I
C
= 0
V
CE
= 10V, I
C
= 2mA
60
50
7
160
0.1
150
3.5
460
0.3
V
MHz
pF
Min
Typ
Max
0.1
100
Unit
ìA
ìA
V
V
V
V
CE(sat)
I
C
= 100mA, I
B
= 10mA
f
T
C
ob
V
CB
= 10V, I
E
=-2mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
h
FE
Classification
Marking
Rank
h
FE
ZQ
Q
160 260
ZR
R
210 340
ZS
S
290 460
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