SMD Type
Transistors
IC
Product specification
2SD1821A
Features
High collector-emitter voltage V
CEO
Low noise voltage NV
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Rating
185
185
5
100
50
150
150
-55 to +150
Unit
V
V
V
A
A
mW
Electrical Characteristics Ta = 25
Parameter
Collector-emitter voltage
Emitter-base voltage
Collector-base cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noixe voltage
Symbol
V
CEO
V
EBO
I
CBO
h
FE
Testconditons
I
C
= 100 ìA, I
B
= 0
I
E
= 10 ìA, I
C
= 0
V
CB
= 100 V, I
E
= 0
V
CE
= 5 V, I
C
= 10 mA
130
Min
185
5
1
330
V
150
2.3
150
MHz
pF
mV
Typ
Max
Unit
V
V
ìA
V
CE(sat)
I
C
= 30 mA, I
B
= 3 mA
f
T
C
ob
NV
V
CB
= 10 V, I
E
= -10 mA, f = 200 MHz
V
CB
= 10 V, I
E
= 0, f = 1 MHz
V
CE
= 10 V, I
C
= 1 mA, G
V
= 80 dB, R
g
= 100KÙ
,
Function = FLAT
h
FE
Classification
Marking
Rank
h
FE
Q
130 220
L
R
185 330
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