SMD Type
Transistors
IC
Product specification
2SD1823
Features
High forward current transfer ratio hFE.
Low collector-emitter saturation voltage V
CE(sat).
High emitter-base voltage V
EBO.
Low noise voltage NV.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
50
40
15
50
100
150
150
-55 to +150
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector-base cutoff current
Collector-emitter cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
Testconditons
I
C
= 10 ìA, I
E
= 0
I
C
= 1 mA, I
B
= 0
I
E
= 10 ìA, I
C
= 0
V
CB
= 20 V, I
E
= 0
V
CE
= 20 V, I
B
= 0
V
CE
= 10 V, I
C
= 2 mA
400
0.05
120
Min
50
40
15
0.1
1
2000
0.20
V
MHz
Typ
Max
Unit
V
V
V
ìA
ìA
V
CE(sat)
I
C
= 10 mA, I
B
= 1 mA
f
T
V
CB
= 10 V, I
E
= ?2 mA, f = 200 MHz
h
FE
Classification
Marking
Rank
h
FE
R
400 800
1Z
S
600 1200
T
1000 2000
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