SMD Type
IC
Product specification
2SD1898
Features
High V
CEO
, V
CEO
=80V .
High I
C
, I
C
=1A (DC) .
Good h
FE
linearity .
Low V
CE (sat)
.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C
(Pulse) *
1
P
C
P
C
*
2
T
j
T
stg
Rating
120
80
5
1
2
0.5
2
150
-55 to +150
Unit
V
V
V
A
A
W
W
Collector power dissipation
Junction temperature
Storage temperature
*1. Pw=20ms.
*2. 40X40X0.7mm Ceramic board.
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
I
C
=50ìA
I
C
=1mA
I
E
=50ìA
V
CB
=100V
V
EB
=4V
V
CE
=3V,I
C
=0.5A
82
0.15
100
20
Testconditons
Min
120
80
5
1
1
390
0.4
V
MHz
pF
Typ
Max
Unit
V
V
V
ìA
ìA
V
CE(sat)
I
C
=500mA,I
B
=20mA
f
T
C
ob
V
CE
=10V, I
E
= -50mA, f=100MHz
V
CB
=10V, I
E
=0A, f=1MHz
h
FE
Classification
Marking
Rank
h
FE
P
82 180
DF
Q
120 270
R
180 390
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4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
