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2SD1899-Z 参数 Datasheet PDF下载

2SD1899-Z图片预览
型号: 2SD1899-Z
PDF下载: 下载PDF文件 查看货源
内容描述: 低VCE (SAT) 。高hFE.Collector - 基极电压VCBO 60 V [Low VCE(sat). High hFE.Collector-base voltage VCBO 60 V]
分类和应用: 晶体晶体管开关
文件页数/大小: 2 页 / 227 K
品牌: TYSEMI [ TY Semiconductor Co., Ltd ]
 浏览型号2SD1899-Z的Datasheet PDF文件第2页  
SMD Type
IC
Product specification
2SD1899-Z
TO-252
+0.15
1.50
-0.15
Unit: mm
2.30
+0.8
0.50
-0.7
+0.1
-0.1
6.50
+0.2
5.30
-0.2
+0.15
-0.15
Features
Low V
CE(sat)
.
+0.2
9.70
-0.2
High hFE.
+0.1
0.80
-0.1
+0.15
0.50
-0.15
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector Current (pulse) *1
Base current
Total power dissipation Ta = 25
Total power dissipation T
C
= 25
Junction temperature
Storage temperature
*1 Pulse Test PW
10ms, Duty Cycle
50%.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
T
*2
P
T
T
j
T
stg
Rating
60
60
7
3
5
0.5
2
10
150
-55 to +150
Unit
V
V
V
A
A
A
W
W
*2 Mounted on ceramic substrate of 7.5mm
2
x0.7mm
3
.8
0
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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