SMD Type
Transistors
IC
Product specification
2SD1949
Features
High current.(I
C
=5A)
Low saturation voltage, typically V
CE(sat)
=0.1V at I
C
/ I
B
=150mA / 15mA.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
T
stg
Rating
50
50
5
0.5
0.2
150
-55 to +150
Unit
V
V
V
A
W
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Output capacitance
Transition frequency
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
I
C
=1mA
V
CB
=30V
V
EB
=4V
V
CE
/I
C
=3V/0.01A
V
CE
=5V , I
E
= -20mA , f=100MHz
V
CB
=10V , I
E
=0A , f=1MHz
120
Testconditons
Min
50
50
5
0.5
0.5
390
0.4
250
6.5
V
MHz
pF
Typ
Max
Unit
V
V
V
ìA
ìA
V
CE(sat)
I
C
=100ìA
f
T
C
ob
I
E
=100ìA
I
C
/I
B
=150mA/15mA
h
FE
Classification
Marking
Rank
h
FE
Q
120 270
Y
R
180 390
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