SMD Type
Transistors
IC
Product specification
2SD1950
Features
High dc current gain and good h
FE
.
Low collector saturation voltage.
High V
EBO
.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (Pulse) *
Total power dissipation
Junction temperature
Storage temperature
* PW
10ms, duty cycle
50%
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C
P
T
T
j
T
stg
Rating
30
25
15
2
3
2
150
-55 to +150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector saturation voltage
Base saturation voltage
Base to emitter voltage *
Gain bandwidth product
Output capacitance
* Pulsed: PW
350 ìs, duty cycle
2%
Symbol
I
CBO
I
EBO
h
FE
Testconditons
V
CB
= 30 V, I
E
= 0
V
EB
= 10 V, I
C
= 0
V
CE
= 5.0 V, I
C
= 1.0 A
V
CE
= 5.0 V, I
C
= 2.0 A
V
CE(sat)
I
C
= 1 A, I
B
= 10 mA
V
BE(sat)
I
C
= 1 A, I
B
= 10 mA
V
BE
f
T
C
ob
V
CE
= 5.0 V, I
C
= 300 mA
V
CE
= 10 V, I
E
= -500 mA
V
CB
= 10 V, I
E
= 0 , f = 1.0 MHz
600
150
800
400
0.18
0.83
660
350
26
35
0.3
1.2
700
V
V
mV
MHz
pF
1500
Min
Typ
Max
100
100
3200
Unit
nA
nA
h
FE
Classification
Marking
hFE
VM
800 1600
VL
1200 2400
VK
2000 3200
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TYSEMI [ TY Semiconductor Co., Ltd ]
