SMD Type
Transistors
IC
Product specification
2SD1979
Features
Low on resistance ron.
High forward current transfer ratio hFE.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
50
20
25
300
500
150
150
-55 to +150
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector-emitter voltage
Base-emitter voltage
Collector-base cutoff current
Collector-emitter cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
CEO
V
BE
I
CBO
I
CEO
h
FE
Testconditons
I
C
= 1 mA, I
B
= 0
V
CE
= 2 V, I
C
= 4 mA
V
CB
= 50 V, I
E
= 0
V
EB
= 25 V, I
C
= 0
V
CE
= 2 V, I
C
= 4 mA
500
Min
20
0.6
1
1
2500
0.1
80
4.5
V
MHz
pF
Typ
Max
Unit
V
V
ìA
ìA
V
CE(sat)
I
C
= 30 mA, I
B
= 3 mA
f
T
Cob
V
CB
= 6 V, I
E
= -4 mA, f = 200 MHz
V
CB
= 10 V, I
E
= 0, f = 1 MHz
ON resistance
R
on
1
Ù
h
FE
Classification
Marking
Rank
h
FE
S
500 1500
3W
T
800 2500
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TYSEMI [ TY Semiconductor Co., Ltd ]
