SMD Type
Transistors
IC
Product specification
2SD2121S
TO-252
Unit: mm
+0.1
2.30
-0.1
Features
Low frequency power amplifier.
+0.15
1.50
-0.15
+0.15
6.50
-0.15
+0.2
5.30
-0.2
0.50
+0.8
-0.7
+0.2
9.70
-0.2
+0.1
0.80
-0.1
+0.15
0.50
-0.15
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
T
C
= 25
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
T
stg
Rating
35
35
5
2.5
3
18
150
-55 to +150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
DC current transfer ratio *
Base to emitter voltage *
Collector to emitter saturation voltage *
* Pulse test.
Symbol
Testconditons
Min
35
35
5
20
60
20
1.5
1.0
V
V
320
Typ
Max
Unit
V
V
V
ìA
V
(BR)CBO
I
C
= 1 mA, I
E
= 0
V
(BR)CEO
I
C
= 10 mA, R
BE
=
V
(BR)EBO
I
E
= 1 mA, I
C
= 0
I
CBO
h
FE
V
BE
V
CB
= 35 V, I
E
= 0
V
CE
= 2 V,I
C
= 0.5 A
V
CE
= 2 V,I
C
= 1.5 A
V
CE
= 2 V,I
C
= 1.5 A
V
CE(sat)
I
C
= 2 A,I
B
= 0.2 A
h
FE
Classification
Marking
hFE
B
60 120
C
100 200
D
160 320
3
.8
0
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