SMD Type
Transistors
IC
Product specification
2SD2324
SOT-23
Unit: mm
Features
Low saturation voltage.
+0.1
2.4
-0.1
+0.1
2.9
-0.1
+0.1
0.4
-0.1
1
2
+0.1
0.95
-0.1
+0.1
1.9
-0.1
Large current capacity.
Small-sized package facilitating the realization of
high-density, small-sized hybrid ICs.
0.55
Contains a bias resistor between base and emitter.
+0.1
1.3
-0.1
Contains a diode between colletor and emitter.
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage, With Zener diode (11±3V)
Collector-emitter voltage, With Zener diode (11±3V)
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Jumction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
20
15
5
0.8
2
200
150
-55 to +150
Unit
V
V
V
A
A
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
DC current Gain
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Diode forward voltage
Base-emitter resistance
V
F
R
BE
Symbol
Ic
BO
h
FE
f
T
C
ob
Testconditons
V
CB
= 15V , I
E
= 0
V
CE
= 2V , I
C
= 0.5A
V
CE
= 2V , I
C
= 0.5A
V
CB
= 10V , f = 1MHz
70
150
15
0.16
0.85
20
20
15
1.5
1
V
kÙ
0.3
1.2
MHz
pF
V
V
V
V
Min
Typ
Max
1.0
Unit
ìA
V
CE(sat)
I
C
= 500mA , I
B
= 10mA
V
BE(sat)
I
C
= 500mA , I
B
= 10mA
V
(BR)CBO
I
C
= 10ìA , I
E
= 0
I
C
= 10ìA , R
BE
=
V
(BR)CEO
I
C
= 10mA , R
BE
=
I
F
= 0.5A
Marking
Marking
BN
0-0.1
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TYSEMI [ TY Semiconductor Co., Ltd ]
