CHA2063a
7-13GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2063a is a two-stage wide band
monolithic low noise amplifier.
The circuit is manufactured with a
PM-HEMT process : 0.25µm gate length,
via holes through the substrate, air bridges
and electron beam gate lithography.
It is supplied in chip form or in an hermetic
leadless ceramic package.
Main Features
■
Broad band performance 7-13GHz
■
2.0dB noise figure, 8-13GHz
■
19dB gain
■
Low DC power consumption, 40mA
■
18dBm 3rd order intercept point
■
Chip size : 1,52 x 1,27 x 0.1mm
Pin Out
1 - NC
2 - NC
3 - RF output
4 - NC
5 - Vdd
6 - RF input
Main Characteristics
Tamb = +25°C, package form
Symbol
NF
G
∆G
Parameter
Noise figure, 7-8GHz
Noise figure, 8-13GHz
Gain
Gain flatness
16
Min
Typ
2.5
2.0
19
±
2.0
Max
3.0
2.5
Unit
dB
dB
dB
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Ref. : DSCHA20630096 -05-Apr-00
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
