CHA2069RAF
18-31GHz Low Noise Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The monolithic microwave IC (MMIC) in the
package is a three-stage self biased wide
band monolithic low noise amplifier.
The MMIC is manufactured with a standard
PM-HEMT process: 0.25µm gate length,
via holes through the substrate, air bridges
and electron beam gate lithography.
It is supplied in a new SMD leadless chip
carrier.
Main Features
■
Broad band performance: 18-31GHz
■
Gain = 21dB (typical)
■
Noise Figure 3.0 dB (typical for f<26GHz)
■
Return loss < -6dB
■
SMD leadless package
■
Dimensions: 5.08 x 5.08 x 0.97 mm
3
SMD Package Dimensions
Please note that PIN 1 is located in the lower left corner of the package (front-side view) for all SMD-type packages from United Monolithic
Semiconductors. It is indicated by a triangle on the package lid. Starting with PIN 1 the other pads are numbered counter-clockwise (front-side view).
ATTENTION: The dot on the backside of the package (i.e. side with metallic pads) is just for fabrication purposes and does NOT indicate the
location of PIN 1.
Ref. : DSCHA2069RAF2169 -18-June-02-
1/7
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
