CHA2091
36-40GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2091 is a two-stage wide band
monolithic low noise amplifier.
The circuit is manufactured with a standard
HEMT process: 0.25µm gate length, via
holes through the substrate, air bridges and
electron beam gate lithography.
It is supplied in chip form.
Main Features
■
Broad band performance 36-40GHz
■
2.5dB noise figure, 36-40GHz
■
14dB gain,
±
0.5dB gain flatness
■
Low DC power consumption, 45mA
■
20dBm 3rd order intercept point
■
Chip size: 1,67 x 1,03 x 0.1mm
Gain ( dB )
20
18
16
14
12
10
8
6
4
2
0
20
25
30
35
40
45
50
Frequency ( GHz )
10
9
8
Noise Figure ( dB )
7
6
5
4
3
2
1
0
On wafer typical measurements.
Main Characteristics
Tamb = +25°
C
Symbol
NF
G
∆G
Parameter
Noise figure, 36-40GHz
Gain
Gain flatness
12
Min
Typ
2.5
14
±
0.5
±
1.0
Max
4.0
Unit
dB
dB
dB
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Ref. : DSCHA20917150 - 30 May 07
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
