CHA2092b
18-32GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2092 is a high gain broadband three-
stage monolithic low noise amplifier. It is
designed for a wide range of applications, from
military
to
commercial
communication
systems. The backside of the chip is both RF
and DC ground. This helps simplify the assembly
process. Self biasing technique is implemented
on chip to ease the circuit biasing.
The circuit is manufactured with a P-HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Vds
IN
8831
OUT
Vgs1
Vgs2,3
Main Features
■
Broadband performances : 18-32GHz
■
2.5dB Noise Figure
■
10dBm output power ( -1dB gain comp. )
■
22dB
±1.0dB
gain
■
Low DC power consumption, 60mA @ 3.5V
■
Chip size : 1.67 X 0.97 X 0.10 mm
Gain & NF ( dB )
30
25
20
15
10
5
0
15 17 19 21 23 25 27 29 31 33 35
Frequency (GHz)
Main Characteristics
Tamb. = 25°C
Symbol
Fop
G
NF
P1dB
Id
Small signal gain
Noise figure (20-32GHz)
Output power at 1dB gain compression
Bias current
8
Parameter
Operating frequency range
Min
18
17
Typ
22
2.5
10
60
Max
32
Unit
GHz
dB
3.5
dB
dBm
100
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA20921233 21-August-01
1/6
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
