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CHA2093RBF 参数 Datasheet PDF下载

CHA2093RBF图片预览
型号: CHA2093RBF
PDF下载: 下载PDF文件 查看货源
内容描述: 20-30GHz低噪声放大器 [20-30GHz Low Noise Amplifier]
分类和应用: 放大器
文件页数/大小: 8 页 / 188 K
品牌: UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
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CHA2093RBF
20-30GHz Low Noise Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The monolithic microwave IC (MMIC) in the
package is a two-stage wide band
monolithic low noise amplifier.
The circuit is manufactured with a standard
PHEMT process : 0.25µm gate length, via
holes through the substrate, air bridges
and electron beam gate lithography.
It is supplied in a new SMD leadless chip
carrier.
Main Features
Broad band performance: 20-30GHz
Gain = 14dB (typical)
Noise Figure 3.0dB (typical)
Return loss < -7dB
Low DC consumption < 50mA
SMD leadless package
Dimensions: 5.08 x 5.08 x 0.97 mm
3
SMD Package Dimensions
"Please note that PIN 1 is located in the lower left corner of the package (front-side view) for all SMD-type packages from United Monolithic Semiconductors. It is indicated
by a triangle on the package lid. Starting with PIN 1 the other pads are numbered counter-clockwise (front-side view). ATTENTION: The dot on the backside of the
package (i.e. side with metallic pads) is just for fabrication purposes and does NOT indicate the location of PIN 1."
Ref. : DSCHA2093RBF2057 -26-Feb.-02-
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09