CHA2093
20-30GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2093 is a two-stage wide band
monolithic low noise amplifier.
The circuit is manufactured with a standard
HEMT process : 0.25µm gate length, via
holes through the substrate, air bridges
and electron beam gate lithography.
It is supplied in chip form.
IN
50
25
Vd
7034
OUT
Vg 1
Vg 2
20
Gain ( dB )
10
Noise Figure ( dB )
9
8
7
6
5
4
3
2
1
0
10
15
20
25
30
35
40
Frequency ( GHz )
Main Features
■
Broad band performance 20-30GHz
■
2.2dB noise figure, 20-30GHz
■
15dB gain,
±
0.5dB gain flatness
■
Low DC power consumption, 50mA
■
20dBm 3rd order intercept point
■
Chip size : 1,67 x 1,03 x 0.1mm
18
16
14
12
10
8
6
4
2
0
On wafer typical measurements.
Main Characteristics
Tamb = +25°C
Symbol
NF
G
∆G
Parameter
Noise figure, 20-30GHz
Gain
Gain flatness
13
Min
Typ
2.2
15
±
0.5
±
1.0
Max
3.0
Unit
dB
dB
dB
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Ref. : DSCHA20939042
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
