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CHA2094B99F/00 参数 Datasheet PDF下载

CHA2094B99F/00图片预览
型号: CHA2094B99F/00
PDF下载: 下载PDF文件 查看货源
内容描述: 36-40GHz低噪声,高增益放大器 [36-40GHz Low Noise High Gain Amplifier]
分类和应用: 放大器
文件页数/大小: 8 页 / 113 K
品牌: UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
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CHA2094b
36-40GHz Low Noise High Gain Amplifier
GaAs Monolithic Microwave IC
Description
Vds
Vds
The CHA2094 is a three-stage monolithic low
noise amplifier. It is designed for a wide range
of applications, from military to commercial
communication systems.
The circuit is manufactured with a HEMT
process : 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
IN
OUT
Vgs1&2
Vgs3
Main Features
Gain & NF ( dB )
Broadband performances : 36-40GHz
3.0dB Noise Figure
21dB gain
±1.5dB
gain flatness
Low DC power consumption, 60mA @ 3.5V
Chip size : 1.72 X 1.08 X 0.10 mm
24
20
16
12
8
4
0
34
Typical on wafer measurements :
35
36
37
38
39
40
41
42
Frequency (GHz)
Main Characteristics
Tamb. = 25°C
Symbol
Fop
G
P1dB
NF
Parameter
Operating frequency range
Small signal gain
Output power at 1dB gain compression
Noise figure
Min
36
18
5
Typ
Max
40
Unit
GHz
dB
dBm
21
8
3.0
4.0
dB
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA20949312 – 08-Nov.-99
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09