CHA2095a
36-40GHz Low Noise Very High Gain Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2095a is a four-stage monolithic low
noise amplifier. It is designed for a wide range
of applications, from military to commercial
communication systems.
The circuit is manufactured with a HEMT
process : 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
In
Vd
Vd
Out
Vg 1,2
Vg 3,4
Typical on wafer measurements :
¦
Broadband performances
¦
3.5dB Noise Figure
¦
26dB gain
¦
±1.0dB
gain flatness
¦
Low DC power consumption, 90mA @ 3.5V
¦
Chip size : 2.07 X 1.11 X 0.10 mm
Gain & NF ( dB )
Main Features
30
25
20
15
10
5
0
30
35
40
Frequency (GHz)
45
50
Main Characteristics
Tamb. = 25°C
Symbol
Fop
G
P1dB
NF
Parameter
Operating frequency range
Small signal gain
Output power at 1dB gain compression
Noise figure
Min
36
22
8
Typ
Max
40
Unit
GHz
dB
dBm
26
10
3.5
4.0
dB
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA20958147
1/7
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
