CHA2192
24-26.5GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2192 is a two stages low noise
amplifier. It is designed for a wide range of
applications, from military to commercial
communication systems. The backside of the
chip is both RF and DC grounds. This helps
simplify the assembly process.
The circuit is manufactured with a HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Gain & NF ( dB )
Main Features
■
1.8 dB noise figure
■
15 dB
±
1dB gain
■
10 dBm output power
■
Very good broadband input matching
■
DC power consumption, 40mA @ 3.5V
■
Chip size : 1.67 x 0.97 x 0.10 mm
20
18
16
14
12
10
8
6
4
2
0
16
18
20
22
24
26
Gain
NF
28
30
32
34
Frequency ( GHz )
Typical on Wafer Measurements
Main Characteristics
Tamb. = 25°C
Symbol
Fop
G
NF
P1dB
Parameter
Operating frequency range
Small signal gain
Noise figure
Output power at 1dB gain compression
Min
24
14
Typ
15
1.8
Max
26.5
Unit
GHz
dB
2.0
dB
dBm
8
10
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA21928155
1/6
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
