CHA2266
RoHS COMPLIANT
12.5-17GHz Low-Noise Driver Amplifier
GaAs Monolithic Microwave IC
Description
VD 1
The CHA2266 is a self biased, low-noise high
gain driver amplifier. It is designed mainly for
VSAT applications in Ku-band. The backside of
the chip is both RF and DC grounded. This
helps to simplify the assembly process.
The circuit is manufactured on a standard GaAs
PHEMT process, with via holes through the
substrate, air bridges and electron beam gate
lithography.
VD 2
IN
OUT
Main Features
•
•
•
•
•
•
Broad band performance 12.5–17GHz
2.5dB noise figure
34dB gain, +/- 0.5dB gain flatness
Low DC power consumption:130mA
Saturated output power : 16dBm
Chip size 2.32 x 1.02 x 0.1mm
Typical on wafer measurements
( Vds = 4V, Ids = 130mA )
40
35
30
25
Gain & Return loss / dB
20
15
10
5
0
-5
-10
-15
-20
5
6
7
8
9
10
11
12
13
14 15 16 17
Frequency / GHz
18
19
20
21
22
23
24
25
4,1
2,9
2,5
2,0
1,9
1,6
1,5
1,5
2,2
MS11
MS21
MS22
NF
Main Characteristics
Tamb=+25°
C
Symbol
Fop
G
NF
P1dB
Parameter
Operating frequency range
Small signal gain
Noise Figure
Output power at 1 dB gain
compression
Min
12.5
31
Typ
34
2.5
14.5
Max
17
3
Unit
GHz
dB
dB
dBm
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA22667082- 23 Mar 07
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09