CHA2295
6-11GHz Buffer Splitter Amplifier
Electrical Characteristics for Broadband Operation
Tamb=+25° Vd=3.5V Vg tuned for Id=160mA
C,
Symbol
Fop
G
∆G
Is
Ic
Psat
VSWRin
VSWRout
Parameter
Operating frequency range (1)
Small signal gain (1)
Small signal gain flatness (1)
Reverse isolation (1)
Isolation between channels (1)
Saturated output power (1)
Input VSWR (1)
Output VSWR (1)
Min
6
15
Typ
Max
11
Unit
GHz
dB
dB
dB
dB
dBm
18
±1.5
60
18
+12
+14
2.0:1
2.3:1
160
220
Id_small signal Bias current
mA
(1) These values are representative for on-wafer measurements that are made without bonding
wires at the RF ports.
Absolute Maximum Ratings
Tamb=25° (1)
C
Symbol
Vds
Ids
Vgs
Vdg
Pin
Tch
Ta
Tstg
Parameter
Maximum Drain bias voltage
Maximum drain bias current
Gate bias voltage
Maximum drain to gate voltage (Vd - Vg))
Maximum input power overdrive (2)
Maximum channel temperature
Operating temperature range
Storage temperature range
Values
4.0
250
-2.5 to +0.4
+5
+15
+175
-40 to +85
-55 to +125
Unit
V
mA
V
V
dBm
°
C
°
C
°
C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA22957262 - 19 Sep 07
2/6
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
