欢迎访问ic37.com |
会员登录 免费注册
发布采购

CHA2411-QDG 参数 Datasheet PDF下载

CHA2411-QDG图片预览
型号: CHA2411-QDG
PDF下载: 下载PDF文件 查看货源
内容描述: GaAs单片微波IC采用QFN封装 [GaAs Monolithic Microwave IC In QFN package]
分类和应用: 微波
文件页数/大小: 10 页 / 684 K
品牌: UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
 浏览型号CHA2411-QDG的Datasheet PDF文件第2页浏览型号CHA2411-QDG的Datasheet PDF文件第3页浏览型号CHA2411-QDG的Datasheet PDF文件第4页浏览型号CHA2411-QDG的Datasheet PDF文件第5页浏览型号CHA2411-QDG的Datasheet PDF文件第6页浏览型号CHA2411-QDG的Datasheet PDF文件第7页浏览型号CHA2411-QDG的Datasheet PDF文件第8页浏览型号CHA2411-QDG的Datasheet PDF文件第9页  
CHA2411-QDG
RoHS COMPLIANT
20-25GHz LNA
GaAs Monolithic Microwave IC
In QFN package
Description
The CHA2411 is a monolithic Low
noise Amplifier in K band providing 26 dB gain
from a single bias supply +5V with a noise
figure of 2.5 dB. All the active devices are self
biased on chip.
The circuit is manufactured with a
standard GaAs PHEMT process: 0.25µm gate
length, via holes through the substrate, air
bridges and electron beam gate lithography.
The chip is delivered in a 24 Leads
RoHS compliant QFN4x4 package.
Functional diagram
Main Features
n
n
n
n
n
Excellent noise figure : 2.5 dB
Stable gain vs temperature 26
±
2dB
Single supply : +5V
Devices self biased on chip
Standard SMD package : QFN 24L 4x4
Plastic Package
Main Characteristics in QFN package
Tamb = +25°C
Parameters
Frequency range
Small signal Gain
SSB Noise figure
Input / Output Return Loss
Min
20
22
26
2.5
15
Typ
Max
25
30
Unit
GHz
dB
dB
dB
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA2411QDG6174 - 23 Jun 06
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09