CHA5010b
X Band Driver Amplifier
GaAs Monolithic Microwave IC
Description
This CHA5010b is a two-stage monolithic
driver amplifier.
The circuit is manufactured with a
standard MESFET process : via holes
through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form.
Vg
Vd
Main Features
¦
Broadband performance : 9-10.5GHz
¦
27dBm output power
(pulsed meas., -1dB gain compression)
¦
15dB gain
¦
±
1.5dB gain flatness
¦
Chip size : 2,09 x 1,27 x 0.10 mm
IN
OUT
Main Characteristics
Tamb. = 25°C
Symbol
Fop
G
Pout
Parameter
Operating frequency range
Small signal gain
Output power
(Pulsed meas., Pin = +13dBm)
Min
9
14
26
15
27
Typ
Max
10.5
Unit
GHz
dB
dBm
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA50100096 - 05-Apr-00
1/4
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
