CHA5051-QDG
RoHS COMPLIANT
7-16GHz Medium Power Amplifier
GaAs Monolithic Microwave IC in SMD package
Description
The CHA5051-QDG is a high gain three-
stage monolithic medium power amplifier.
It is designed for a wide range of
applications, from military to commercial
communication systems.
The circuit is manufactured with a pHEMT
process, 0.15µm gate length, via holes
through the substrate.
It is supplied in lead-free SMD package
Main Features
■
Broadband performance 7-16GHz
■
25dB gain & 3.2dB noise figure
■
RF ports ESD protected (see page 8)
■
25dBm output power @ 1dB compression
■
DC power consumption, 310mA @ 4.5V
■
24LQFN4x4
Typical on board measurements
Main Characteristics
Tamb. = 25° Vd = 4.5V
C,
Symbol
Fop
G
NF
P1dB
Id
Parameter
Operating frequency range
Small signal gain
Noise figure
Output power at 1dB gain compression
Bias current
Min
7
Typ
Max
16
Unit
GHz
dB
dB
dBm
mA
25
3.2
25
310
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!
Ref. : DSCHA5051-QDG7152 - 01 Jun 07
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
