CHA5052-QGG
RoHS COMPLIANT
7-16GHz High Power Amplifier
GaAs Monolithic Microwave IC in SMD package
Description
The CHA5052-QGG is a three-stage
monolithic high power amplifier.
The circuit is manufactured with a power
P-
HEMT process, 0.15µm gate length, via holes
through the substrate.
It is supppplied in RoHS compliant SMD
package.
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
16
15
14
6
7
8
9
Main Features
■
Frequency range 7-16GHz
■
Gain: 19dB
■
37dBm 3
rd
order intercept point
■
29dBm Output Power @1dB compression
■
ESD protected (see page 7)
■
DC power consumption, 700mA @ 5V
■
28LQFN5x5
P1dB (dBm)
Linear Gain (dB)
10
11
12
Frequency (GHz)
13
14
15
16
Typical on board measurements
Main Characteristics
Tamb. = 25° Vd = 5V
C,
Symbol
Fop
Parameter
Operating frequency range
Small signal gain
Output power at 1dB gain compression
Output IP3
Min
7
Typ
Max
16
Unit
GHz
dB
dBm
dBm
G_lin
P1dB
OIP3
19
29
37
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!
Ref : DSCHA5052QGG7033 - 02 Feb 07
1/10
/Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
