CHA5093
22-26GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5093 is a high gain three-stage
monolithic high power amplifier. It is designed
for a wide range of applications, from military to
commercial
communication
systems. The
backside of the chip is both RF and DC grounds.
This helps simplify the assembly process.
The circuit is manufactured with a PM-HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Gain & RLoss (dB)
25
Main Features
Performances : 22-26GHz
29dBm output power
20 dB
±
1.5dB gain
DC power consumption, 600mA @ 6V
Chip size : 3.27 x 2.47 x 0.10 mm
20
15
10
5
0
-5
-10
-15
-20
-25
15
20
Frequency
25
30
S11
S22
Typical on Wafer Measurements
Main Characteristics
Tamb. = 25°C
Symbol
Fop
G
P1dB
Id
Parameter
Operating frequency range
Small signal gain
Output power at 1dB gain compression
Bias current
Min
22
18
28
Typ
Max
26
Unit
GHz
dB
dBm
20
29
600
900
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA50930129 -09 May-00
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
