CHA5295
RoHS COMPLIANT
24.5-26.5GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5295 is a high gain three-stage
monolithic high power amplifier. It is designed for
a wide range of applications, from military to
commercial
communication
systems. The
backside of the chip is both RF and DC grounds.
This help simplifies the assembly process.
The circuit is manufactured with a PM-HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam gate
lithography.
It is available in chip form.
32
30
Vd1 Vd2
Vg3 Vd3
Vg1 Vg2 Vd2
Vg3 Vd3
Main Features
■
Performances : 24.5-26.5GHz
■
31dBm output power @ 1dB comp.
■
18 dB
±
1dB gain
■
DC power consumption, 800mA @ 6V
■
Chip size : 4.01 x 2.52 x 0.05 mm
28
26
24
22
20
18
16
14
12
10
24,5
25
Pout@3dB (dBm)
PAE@1dB (%)
Pout@1dB (dBm)
Linear Gain (dB)
25,5
26
Frequency (GHz)
26,5
27
27,5
Typical on jig Measurements
Main Characteristics
Tamb. = 25°
C
Symbol
Fop
G
P1dB
Id
Parameter
Operating frequency range
Small signal gain
Output power at 1dB gain compression
Bias current
Min
24.5
17
30
Typ
18
31
800
Max
26.5
Unit
GHz
dB
dBm
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA52953125 - 05 May 03
1/9
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09