27-30GHz High Power Amplifier
CHA5296
Electrical Characteristics
Tamb = +25°C
Symbol
Parameter
Min
Typ
Max
Unit
Fop
Operating frequency range (1)
Small signal gain (1)
27
30
GHz
G
∆G
16
18
±1
50
29
30
38
16
dB
dB
Small signal gain flatness (1)
Reverse isolation
Is
dB
P1dB
P03
IP3
PAE
Pulsed output power at 1dB compression (1)
Output power at 3dB gain compression (1)
3rd order intercept point (2)
28
29
dBm
dBm
dBm
%
Power added efficiency at Psat
12
VSWRin Input VSWR (2)
VSWRout Output VSWR (2)
5:1
2.5:1
Vd
Id
Drain bias voltage
6
V
Bias current @ small signal
850
1000
mA
(1) These values are representative for pulsed on-wafer measurements that are made without
bonding wires at the RF ports.
(2) Value representative for CW on jig measurement.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Vd
Parameter
Values
6.5
Unit
V
Drain bias voltage
Drain bias current
Gate bias voltage
Id
1450
mA
V
Vg
-2.5 to +0.4
-8
Vgd
Pin
Negative gate drain voltage ( = Vg - Vd)
Maximum peak input power overdrive (2)
Maximum channnel temperature
Operating temperature range
V
+18
dBm
°C
Tch
Ta
175
-40 to +80
-55 to +125
°C
Tstg
Storage temperature range
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA52967144 - 24 May 07
2/6
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
