CHA5296
27-30GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5296 is a high gain three-stage
monolithic high power amplifier. It is designed for
a wide range of applications, from military to
commercial
communication
systems. The
backside of the chip is both RF and DC grounds.
This helps simplify the assembly process.
The circuit is manufactured with a PM-HEMT
process on 50µm substrate thickness, 0.25µm
gate length, via holes through the substrate, air
bridges and electron beam gate lithography.
It is available in chip form.
20
Gain & RLosses (dB)
15
10
5
0
-5
-10
-15
-20
20
22
24
26
28
30
32
34
36
Frequency (GHz)
S11
S22
Main Features
■
Performances : 27-30GHz
■
29dBm output power @ 1dB comp. gain
■
15 dB
±
1dB gain
■
DC power consumption, 850mA @ 6V
■
Chip size : 3.80 x 2.52 x 0.05 mm
Typical on jig Measurements
Main Characteristics
Tamb. = 25°C
Symbol
Fop
G
P1dB
Id
Parameter
Operating frequency range
Small signal gain
Output power at 1dB gain compression
Bias current
Min
27
14
28
Typ
15
29
850
Max
30
Unit
GHz
dB
dBm
1000
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA52962147 - 27-May-02
1/6
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09