CHA6517
RoHS COMPLIANT
6 - 18 GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The
CHA6517
is a Dual channel
monolithic three-stage GaAs high power
amplifier designed for wide band
applications.
This device is manufactured using a UMS
0.25 µm Power pHEMT process, including,
via holes through the substrate and air
bridges.
To simplify the assembly process:
•
the backside of the chip is both RF and
DC grounded
•
bond pads and back side are gold
plated for compatibility with eutectic die
attach method and thermosonic or
thermocompression bonding process.
Output Power versus Frequency
Vg
Vd3
Main Features
0.25 µm Power pHEMT Technology
6 – 18 GHz Frequency Range
32dBm Output Power per channel
Compatible for balanced configuration
22dB nominal Gain
Quiescent Bias point : 600mA @ 8V
per channel
Chip size: 4.32 x 3.90 x 0.07 mm
INPUT A
OUTPUT A
Vd1
Vd2
Vd3
INPUT B
OUTPUT B
Vg
Vd3
Main Characteristics
Tamb = +25° (Tamb is the back-side of the chip)
C
Symbol
F_op
Psat
G_lin
Parameter
Operating frequency range
Saturated output power
Linear gain
Min
6
30
19
32
22
Typ
Max
18
Unit
GHz
dBm
dB
Ref. : DSCHA6517-8205 - 25 Jun 08
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09