CHA6558-99F
RoHS COMPLIANT
28-32GHz HPA 2W
GaAs Monolithic Microwave IC
Description
The CHA6558-99F is a monolithic four
stages GaAs high power amplifier, designed
for Ka-Band applications.
The circuit is dedicated to telecommunication
and VSAT, SATCOM and is also well suited
for a wide range of microwave applications
and systems.
It is developed on a robust 0.15µm gate
length pHEMT process, via holes through the
substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
D1
D2
D3
G3
RF IN
G4
D4
RF OUT
G2
G3
Main Features
Linear gain (dB) / Output Power (dBm) & PAE (%)
@
saturation
(dBm)
■
Broadband performances: 28-32GHz
■ 21dB Linear Gain
■ 33dBm output power @3dB compression.
■ 23% PAE@ 3dB compression
■ DC bias: Vd=6Volt@Id=1.4A
■ Chip size 3.46x2.71x0.07mm
39
37
35
33
31
29
27
25
Pout @Saturation
PAE @Saturation
23
21
19
Linear Gain
17
15
28
29
30
Frequency (GHz)
31
32
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Min
Typ
Max
Unit
Freq
Frequency range
28
32
GHz
Gain
Linear Gain
21
dB
Pout
Output Power @3dB compression
33
dBm
PAE
Power added efficiency
23
%
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!
Ref. DSCHA6558-QAG2251 - 07 Sep 12
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - BP46 - 91401 Orsay Cedex France
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
G1
D3
G4
D4
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
