CHA7012
RoHS COMPLIANT
X-band HBT High Power Amplifier
GaAs Monolithic Microwave IC
Description
The
CHA7012
chip is a monolithic two-stage
GaAs high power amplifier designed for X band
applications.
This device is manufactured using a GaInP
HBT process, including, via holes through the
substrate and air bridge. A nitride layer protects
the transistors and the passive components.
Special
heat
removal
techniques
are
implemented to guarantee high reliability.
To simplify the assembly process:
-the backside of the chip is both RF and DC
grounded
-bond pads and back side are gold plated for
compatibility with eutectic die attach method
and thermosonic or thermo compression
bonding process.
TI Vc
TO
Vctrl
Biasing
Circuit
Vc Vc
TTL
Circuit
IN
OUT
TTL
Circuit
Biasing
Circuit
TI Vc
44
TO
Vctrl Vc
Vc
Pout & PAE@3dBc , Linear Gain
PAE@3dBc (%)
40
36
32
28
Main Features
Frequency band: 9.2 -10.4GHz
Output power (P3dB ): 38.5dBm
High linear gain: > 20dB
High PAE: > 38%
Two biasing modes:
-VDigital control thanks to TTL interface
-VAnalog control thanks to biasing circuit
Chip size: 5.00 x 3.68 x 0.1mm
Pout@3dBc(dBm
Linear Gain (Pin=0dBm)
24
20
1
6
9
9.2
9.4
9.6
9.8
1
0
1
0.2
1
0.4
1
0.6
Frequency ( GHz)
Pout & PAE @3dBc and Linear Gain @ 25°
C
Main Characteristics
Vc=7.5V, Ic (Quiescent) = 1.9A, Pulse width=100µs, Duty cycle = 20%
Symbol
Parameter
Min
Typ
Fop
Psat
P_3dBc
G
Top
Max
10.4
Unit
GHz
W
W
dB
°
C
Operating frequency range
Saturated output power @ 25°
C
Output power @ 3dBc @ 25°
C
Small signal gain @ 25°
C
Operating temperature range
9.2
9
7
20
-40
+80
ESD Protections: Electrostatic discharge sensitive device. Observe handling precautions!
Ref. : DSCHA70129082- 23 March 09
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
