CHA7012
X-band HBT High Power Amplifier
GaAs Monolithic Microwave IC
Description
The
CHA7012
chip is a monolithic two-
stage GaAs high power amplifier designed
for X band applications.
This device is manufactured using a GaInP
HBT process, including, via holes through
the substrate and air bridge. A nitride layer
protects the transistors and the passive
components.
Special
heat
removal
techniques are implemented to guarantee
high reliability.
To simplify the assembly process:
-the backside of the chip is both RF and
DC grounded
-bond pads and back side are gold plated
for compatibility with eutectic die attach
method
and
thermosonic
or
thermocompression bonding process.
Pout & PAE@3dBc , Linear Gain
TI Vc
TO
Vctrl
Biasing
Circuit
Vc Vc
TTL
Circuit
IN
OUT
TTL
Circuit
Biasing
Circuit
TI Vc
TO
Vctrl Vc
Vc
44
PAE @ 3dBc (%)
40
36
32
28
Main Features
Frequency band : 9.2 -10.4GHz
Output power (P3dB ): 38.5dBm
High linear gain: > 20dB
High PAE: > 38%
Two biasing modes:
-VDigital control thanks to TTL interface
-VAnalog control thanks to biasing
circuit
Chip size
:
5.00 x 3.68 x 0.1mm
Pout
(dBm
@
3dBc
Linear Gain (Pin=0dBm)
24
20
1
6
9
9.2
9.4
9.6
9.8
1
0
1
0.2
1
0.4
1
0.6
Main Characteristics
Pout & PAE @3dBc and Linear Gain (Temperature 25°C)
Frequency ( G z)
H
Vc=7.5V, Ic (Quiescent) = 1.9A, Pulse width=100µs, Duty cycle = 20%
Symbol
Parameter
Min
Typ
Fop
Psat
P_3dBc
G
Top
Max
10.4
Unit
GHz
W
W
dB
°
C
Operating frequency range
Saturated output power @ 25°
C
Output power @ 3dBc @ 25°
C
Small signal gain @ 25°
C
Operating temperature range
9.2
9
7
20
-40
+80
ESD Protections: Electrostatic discharge sensitive device. Observe handling precautions!
Ref. : DSCHA70127235 - 23 Aug 07
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
