X-band High Power Amplifier
CHA7215
Electrical Characteristics on test fixture
Tamb = 20°C, Vd=8V, Id (Quiescent) = 2.3A, Drain Pu lse width = 25µs, Duty cycle = 10%
Symbol
Fop
Parameter
Operating frequency
Min
8.5
25
Typ
Max
11.5
31
Unit
GHz
dB
G
Small signal gain
28
Small signal gain variation versus
temperature
-0.05
dB/°C
G_T
RLin
RLout
Psat
Input Return Loss
10
12
dB
dB
Output Return Loss
Saturated output power
39.5
-0.01
dBm
dB/°C
Saturated output power variation versus
temperature
Psat_T
PAE_4dBc
Power added efficiency @4dBc
Supply drain current @ 4dBc
Drain supply voltage (2)
34
3.3
8
%
A
V
A
V
Id_4dBc
4.4
Vd1, Vd2, Vd3
Id
Supply quiescent current (1)
Gate supply voltage
2.3
-2.2
Vg1, Vg2, Vg3
(1) Parameter can be adjusted by tuning of Vg.
(2) 0.5V variation on Vd leads to around 0.4dB variation of the output power (impact on
robustness see Maximum ratings)
Absolute Maximum Ratings (1)
Tamb = 20°C
Symbol
Cmp
Vd
Parameter
Compression level (2)
Values
Unit
dBc
V
6
Supply voltage with RF input power
Supply voltage without RF input power
Supply quiescent current
9
Vd
10
3
V
Id
A
Id_sat
Vg
Supply current in saturation
Supply voltage
4.8
A
-1.1
V
Tj
Maximum junction temperature
Storage temperature range
Operating temperature range
175
°C
°C
°C
Tstg
Top
(1)
-55 to +125
-40 to +80
Operation of this device above anyone of these parameters may cause
permanent damage.
(2)
For higher compression the level limit can be increased by decreasing the voltage
Vd using the rate 0.5 V / dBc
Ref : DSCHA72159287 - 14 Oct 09
2/8
Specifications subject to change without notice
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Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
