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CHE1270 参数 Datasheet PDF下载

CHE1270图片预览
型号: CHE1270
PDF下载: 下载PDF文件 查看货源
内容描述: 12-40GHz宽带探测器 [12-40GHz Wide Band Detector]
分类和应用:
文件页数/大小: 6 页 / 395 K
品牌: UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
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CHE1270
RoHS COMPLIANT
12-40GHz Wide Band Detector
GaAs Monolithic Microwave IC
Description
The CHE1270 is a detector that integrates a
matched detection diode (Vdet). A reference
diode is also available to be used in
differential mode (Vref).
It is designed for a wide range of applications
where an accurate transmitted power control
is required, typically commercial
communication systems.
The circuit is manufactured with a Schottky
diode MMIC process, 1µm gate length, via
holes through the substrate and air bridges.
It is available in chip form.
Vdet
Vref
DC
RF_in
CHE1270
Matching
Transmitted power detection (mV)
Main Features
Vdetect= Vref-Vdet (mV)
10000
12 GHz
32GHz
1000
17GHz
37GHz
22GHz
40GHz
27GHz
Wide frequency range 12-40GHz
35dB dynamic range
ESD protected
Chip size: 1.41 x 0.89 x 0.1mm
BCB layer protection
100
10
1
-20 -18 -16 -14 -12 -10 -8
-6
-4
-2
0
2
4
6
8
10 12 14 16 18
Main Characteristics
Tamb = +25° Vdc = +4.5V
C,
Symbol
F
Dr
RL
Parameter
Frequency range
Dynamic range
Return Loss
Min
12
Input power (dBm)
Typ
Max
40
Unit
GHz
dB
dB
35
-10
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!
Ref. : DSCHE1270-7297 - 24 Oct 07
1/6
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09