80W Power Packaged Transistor
Typical S-parameters
The device is composed of 2 independent transistors.
Each transistor has the following S-parameters.
CHK080A-SRA
Tcase=+25°C, CW mode, V
DS
=50V, I
D_Q
=600mA
(300mA on each transistor)
, phase S(i,j) in °.
Freq
(GHz)
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
2.25
2.5
2.75
3
3.25
3.5
3.75
4
4.25
4.5
4.75
5
5.25
5.5
5.75
6
6.25
6.5
6.75
7
7.25
7.5
7.75
8
8.25
8.5
8.75
9
9.25
9.5
9.75
10
Mag
S(1,1)
0.99
0.89
0.90
0.90
0.91
0.92
0.93
0.93
0.94
0.94
0.95
0.95
0.95
0.95
0.95
0.95
0.96
0.95
0.95
0.95
0.95
0.95
0.95
0.95
0.94
0.94
0.93
0.93
0.92
0.92
0.91
0.90
0.89
0.88
0.87
0.85
0.83
0.82
0.80
0.79
0.78
Phase
S(1,1)
0.00
-148.78
-165.08
-171.34
-175.14
-178.05
179.44
177.13
174.95
172.84
170.78
168.74
166.71
164.67
162.61
160.53
158.40
156.21
153.96
151.63
149.21
146.67
144.01
141.19
138.20
134.99
131.54
127.81
123.74
119.28
114.35
108.86
102.71
95.78
87.92
78.95
68.71
57.03
43.79
28.98
12.80
Mag
S(2,1)
102.98
26.70
13.34
8.59
6.13
4.64
3.65
2.95
2.45
2.06
1.77
1.54
1.36
1.22
1.10
1.00
0.93
0.86
0.81
0.76
0.73
0.70
0.68
0.66
0.65
0.64
0.64
0.64
0.65
0.66
0.68
0.70
0.73
0.76
0.80
0.84
0.89
0.95
1.00
1.05
1.10
Phase
S(2,1)
-180.00
94.89
77.63
65.80
55.96
47.41
39.85
33.12
27.06
21.58
16.56
11.94
7.63
3.58
-0.26
-3.92
-7.46
-10.90
-14.26
-17.59
-20.90
-24.22
-27.57
-30.99
-34.51
-38.14
-41.93
-45.92
-50.14
-54.64
-59.48
-64.72
-70.44
-76.71
-83.64
-91.33
-99.89
-109.45
-120.09
-131.91
-144.94
Mag
S(1,2)
0.0000
0.0120
0.0120
0.0110
0.0090
0.0080
0.0060
0.0050
0.0050
0.0050
0.0060
0.0070
0.0080
0.0100
0.0120
0.0130
0.0150
0.0170
0.0190
0.0200
0.0220
0.0240
0.0270
0.0290
0.0310
0.0340
0.0370
0.0400
0.0430
0.0470
0.0510
0.0550
0.0610
0.0660
0.0730
0.0800
0.0880
0.0970
0.1060
0.1150
0.1230
Phase
S(1,2)
180.00
8.67
-4.55
-11.66
-15.55
-16.10
-12.17
-2.19
13.92
31.44
44.67
52.66
56.95
58.94
59.51
59.18
58.27
56.96
55.36
53.56
51.60
49.50
47.28
44.94
42.48
39.89
37.14
34.22
31.10
27.73
24.07
20.05
15.61
10.66
5.10
-1.18
-8.30
-16.37
-25.51
-35.83
-47.36
Mag
S(2,2)
0.53
0.37
0.42
0.50
0.57
0.63
0.69
0.73
0.77
0.80
0.82
0.84
0.86
0.87
0.88
0.89
0.90
0.90
0.91
0.91
0.92
0.92
0.92
0.92
0.92
0.92
0.92
0.92
0.92
0.91
0.91
0.91
0.90
0.90
0.89
0.89
0.88
0.87
0.87
0.86
0.85
Phase
S(2,2)
0.00
-127.84
-137.95
-141.46
-144.97
-148.80
-152.71
-156.53
-160.17
-163.60
-166.83
-169.87
-172.76
-175.50
-178.13
179.33
176.87
174.46
172.08
169.73
167.39
165.04
162.66
160.25
157.78
155.24
152.61
149.87
146.99
143.95
140.70
137.23
133.46
129.35
124.82
119.78
114.10
107.63
100.14
91.38
81.00
Ref. : DSCHK080A-SRA3148 - 28 Jun 13
5/14
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
