CHM2179a
W-band Mixer
GaAs Monolithic Microwave IC
Description
The CHM2179a is a balanced Schottky
diode mixer based on a six quarter wave
ring structure. This circuit is manufactured
with the BES-MMIC process: 1 µm
Schottky diode device, air bridges, via
holes through the substrate, stepper
lithography.
It is available in chip form.
LO
RF
IF
-5
■
W-band LO and RF frequency range
■
Low conversion loss
■
IF from DC to 100MHz
■
High LO/RF isolation
■
High LO/AM noise rejection
■
Very low IF noise
■
Low LO input power
■
Small chip size: 1.53 x 1.17 x 0.10 mm
Conversion loss (dB)
Main Features
-7,5
-10
-12,5
-15
75
75,5
76
76,5
77
77,5
78
LO Frequency (GHz)
Typical conversion characteristic
LO power = 5dBm ; IF=10MHz
(measurement in test fixture)
Main Characteristics
Tamb. = 25°C
Symbol
F_LO,F_RF
F_IF
Lc
I_LO/RF
N_IF
Parameter
LO,RF frequency range
IF frequency range
Conversion loss
LO/RF isolation
IF noise density @ 100kHz
Typ
76-77
DC-100
7.5
20
-158
Unit
GHz
MHz
dB
dB
dBm/Hz
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCH21790192 - 22-Jun-00
1/6
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09