CHR2299-99F
Mechanical data
40-44GHz Down converter
Chip thickness: 100 µm, units: µm, tol:+/- 35 µm
DC pads = 92x92 µm, RF pads = 178x114 µm
Pin number
1
2
3
4
5
6
7, 8
9
10
Pin name
RF_IN
DA
DX
GX
G3
GM
IF_I & IF_Q
4LO_OUT
LO_IN
Description
RF input
LNA drain voltage
Multiplier & Buffer drain voltage
Multiplier gate voltage
LO buffer gate voltage
Mixer gate voltage
IF outputs
Output 4xLO frequency
LO input
Recommended biasing
Pin Name
GM
G3
GX
DX
DA
Pin Number
6
5
4
3
2
Parameter
Mixer gate voltage
LO buffer gate voltage
X4 gate voltage
X4 and buffer drain voltage
LNA Drain voltage
8/12
Nominal value
-0.6 V
-0.3 V
-1.2 V
4V
4V
Ref. : DSCHR22992012 - 19 Jan 12
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
