37-40GHz Integrated Down Converter
Absolute Maximum Ratings
(1)
Tamb.= +25°C
Symbol
Parameter
VD, VD1
Drain bias voltages
IDt
Drain bias current
VGL, VGX Gate bias voltages
P_RF
Maximum peak input power overdrive
(2)
P_LO
Maximum LO input power
Tj
Junction temperature
Ta
Operating temperature range
Tstg
Storage temperature range
(1)
CHR3394-QEG
Values
4.5V
340
-2 to +0.4
+15
+15
175
-40 to +85
-55 to +155
Unit
V
mA
V
dBm
dBm
°C
°C
°C
Operation of this device above anyone of these parameters may cause permanent
damage.
(2)
Duration < 1s.
Typical Bias Conditions
Tamb.= +25°C
Symbol
Pad N
o
VD1, VD
10, 11
ID1
10
VGL
9
VGX
12
Parameter
DC drain voltages (LNA and LO-chain)
LNA drain current controlled with VGL
LNA DC gate voltage
Multiplier DC gate voltage
Values
4
125
-0.1
-0.9
Unit
V
mA
V
V
Ref. : DSCHR3394-QEG1192 - 11 Jul 11
3/14
Specifications subject to change without notice
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UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
