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DBES105A 参数 Datasheet PDF下载

DBES105A图片预览
型号: DBES105A
PDF下载: 下载PDF文件 查看货源
内容描述: 倒装芯片双二极管 [Flip-Chip Dual Diode]
分类和应用: 二极管
文件页数/大小: 4 页 / 94 K
品牌: UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
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DBES105a
RoHS COMPLIANT
Flip-Chip Dual Diode
GaAs Diode
Description
The DBES105a is a dual Schottky diode based
on a low cost 1µm stepper process including a
bump technology. The parasitic inductances
are reduced and result in a very high operating
frequency.
This flip-chip dual diode has been designed for
high performance mixer applications.
Main Features
High cut-off frequencies: 3THz
High breakdown voltage: < -5V
@ 20µA
Good ideality factor: 1.2
Low parasitic inductances
Low cost technology
Dimensions : 0.53 x 0.23 x 0.1mm
Main Characteristics
Tamb. = 25°
C
Symbol
Wu
Fco
n
BVak
Gate Width
Cut-off frequency
Ideality factor
Anode-cathode break-down voltage
Parameter
Typ
5
3
1.2
< -5
Unit
µm
THz
V
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!
Ref. : DSDBES105a6354 - 20 Dec 06
1/4
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09