UM4805
Dual P-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
, unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Conditions
I
D
=-250 A, V
GS
=0V
V
DS
=-24V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
=±25V
V
DS
=V
GS
I
D
=-250 A
V
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=-8A
T
J
=125°C
V
GS
=-20V, I
D
=-8A
Min
-30
Typ
Max
Units
V
-1
-5
±100
-1.7
40
-2.5
16
20.5
15
33
16
21
-0.75
-3
19
25
18
A
nA
V
A
m
m
m
S
V
A
pF
pF
pF
Static Drain-Source On-Resistance
g
FS
V
SD
I
S
V
GS
=-4.5V, I
D
=-5A
Forward Transconductance
V
DS
=-5V, I
D
=-8A
Diode Forward Voltage
I
S
=-1A,V
GS
=0V
Maximum Body-Diode Continuous Current
-1
-2.6
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
g
Gate resistance
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Gate Source Charge
Q
gd
Gate Drain Charge
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=0V, V
DS
=-15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
2076
503
302
2
39
8
11.4
12.7
V
GS
=-10V, V
DS
=-15V, I
D
=-8A
nC
nC
nC
ns
ns
ns
ns
ns
nC
V
GS
=-10V, V
DS
=-15V, R
L
=1.8 ,
R
GEN
=3
I
F
=-8A, dI/dt=100A/ s
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-8A, dI/dt=100A/ s
7
25.2
12
32
26
A: The value of R
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
JA
is the sum of the thermal impedence from junction to lead R
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
SOA curve provides a single pulse rating.
2
UNITPOWER [ Unitpower Technology Limited ]
