US2300
N-Ch 20V Fast Switching MOSFETs
General Description
The US2300 is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the small power switching and load
switch applications.
The US2300 meet the RoHS and Green Product
requirement with full function reliability approved.
Product Summery
BV
DSS
20V
Applications
RD
S(ON)
55m
ID
6.0A
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Features
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent Cdv/dt effect decline
Green Device Available
D
Systems.
SOT23 Pin Configuration
S OT-23
S
G
Absolute Maximum Ratings
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous @ T
J
=25 C
b
-P ulsed
Drain-S ource Diode Forward C urrent
Maximum P ower Dissipation
a
S ymbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
S TG
Limit
20
12
6
20
1.25
1.25
-55 to 150
Unit
V
V
A
A
A
W
C
Operating Junction and S torage
Temperature R ange
1