US2403
P-Ch 20V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃,
unless otherwise noted)
Symbol
BV
DSS
Parameter
Drain-Source Breakdown Voltage
Conditions
V
GS
=0V , I
D
=-250uA
Reference to 25℃ , I
D
=-1mA
V
GS
=-4.5V , I
D
=-3A
R
DS(ON)
V
GS(th)
△V
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
V
GS(th)
Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=-15V , V
GS
=0V , f=1MHz
V
DD
=-10V , V
GS
=-4.5V ,
R
G
=3.3Ω, I
D
=-3A
V
DS
=-15V , V
GS
=-4.5V , I
D
=-3A
V
GS
=-2.5V , I
D
=-2A
V
GS
=-1.8V , I
D
=-1A
V
GS
=V
DS
, I
D
=-250uA
V
DS
=-16V , V
GS
=0V , T
J
=25℃
V
DS
=-16V , V
GS
=0V , T
J
=55℃
V
GS
=±8V
, V
DS
=0V
V
DS
=-5V , I
D
=-3A
Min.
-20
---
---
---
---
-0.3
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
-0.016
44
56
73
-0.5
3.97
---
---
---
14
12.1
1.5
3.1
4.4
45
48.4
30.4
938
108
96
Max.
---
---
55
70
85
-1.0
---
-1
-5
±100
---
16.9
2.1
4.3
8.8
81
97
60.8
1313
151
134
pF
ns
nC
V
mV/℃
uA
nA
S
mΩ
Unit
V
V/℃
△BV
DSS
/△T
J
BV
DSS
Temperature Coefficient
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
Pulsed Source Current
2,4
1,4
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=-1A , T
J
=25℃
I
F
=-3A , dI/dt=100A/µs , T
J
=25℃
Min.
---
---
---
---
---
Typ.
---
---
---
28
9
Max.
-3.6
-14.4
-1
---
---
Unit
A
A
V
nS
nC
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2
UNITPOWER [ Unitpower Technology Limited ]
