US3400
N-Ch 30V Fast Switching MOSFETs
General Description
The US3400 is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the small power switching and load
switch applications.
The US3400 meet the RoHS and Green Product
requirement with full function reliability approved.
Product Summery
BV
DSS
30V
Applications
R
DS(ON)
52mΩ
ID
5.8A
High Frequency Point-of-Load Synchronous s
Small power switching for MB/NB/UMPC/VGA
Networking DC-DC Power System
Features
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent Cdv/dt effect decline
Green Device Available
Load Switch
SOT23 Pin Configuration
D
G
D
S
G
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
T
A
=25°C
A
Current
T
A
=70°C
B
Pulsed Drain Current
T
A
=25°C
Power Dissipation
A
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
, T
STG
Maximum
30
±12
5.8
4.9
30
1.4
1
-55 to 150
Units
V
V
A
T
A
=70°C
W
°C
Junction and Storage Temperature Range
Thermal Data
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
C
Maximum Junction-to-Lead
Symbol
A
A
t 10s
Steady-State
Steady-State
R
R
JA
JL
Typ
65
85
43
Max
90
125
60
Units
°C/W
°C/W
°C/W
1
UNITPOWER [ Unitpower Technology Limited ]
