Surface Mount Transient Voltage Suppressors (TVS)
SM8S Series
Description
The SM8S series is designed specifically to protect sensitive
electronic equipment from voltage transients induced by lightning
and other transient voltage events.
10 To 43 V
6600W
Features
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Junction passivation optimized design passivated anisotropic
rectifier technology
T
J
=175°C capability suitable for high reliability and automotive
requirement
Available in uni-directional polarity only
Low leakage current
Low forward voltage drop
High surge capability
Meets ISO7637-2 surge specification (varied by test condition)
Meets MSL level 1,
245
°C
AEC-Q101 qualified
Compliant to RoHS Directive 2002/95/EC and in accordance
to WEEE 2002/96/EC
Uni-direction
per J-STD-020,
LF maximum peak of
Cathode
Anode
DO-218AB
Functional Diagram
Primary Characteristics
VWM
P
PPM
(10/1000µs)
P
PPM
(10 /10000μs)
P
D
I
FSM
T
J
max.
10V to 43V
6600W
5200W
8W
700A
175°C
Applications
Use in sensitive electronics protection against voltage transients
induced by inductive load switching and lighting, especially for
automotive load dump protection application.
Maximum Ratings and Thermal Characteristics (T
A
=25℃ unless otherwise noted)
Parameter
with 10/1000µs waveform
Peak Pulse Power Dissipation
with 10/10000µs waveform
Power Dissipation on Infinite Heat Sink at T
A
=25°C (Fig.1)
Peak Pulse Current with a 10/1000µs waveform
Peak Forward Surge Current, 8.3ms Single Half Sine Wave (Note 3)
Operating junction and Storage Temperature Range
Typical thermal resistance, junction to case
P
D
I
PPM(1)
I
FSM
T
J
, T
STG
R
θJC
P
PPM
5200
8.0
See Next Table
700
- 55 to + 175
0.90
Watt
Amps
Amps
°C
°C
/Watt
Symbol
Value
6600
Unit
Watts
Notes:
1. Non-repetitive current pulse derated above T
A
=25°C
UN Semiconductor Co., Ltd.
Revision
October 18, 2013
1/4
@ UN Semiconductor Co., Ltd. 2013
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
UNSEMI [ UN Semiconducctor INC ]
