AlGaAs/GaAs HIGH POWER SIDE LOOK PACKAGE
INFRARED EMITTING DIODE
Description
The MIE-111A1 is a AlGaAs/GaAs infrared emitting diode
molded in diffused, lensed side looking package .
The MIE-111A1 provides a broad range of
intensity selection .
5.72±0.2
(.225±.007)
4.45±0.2
(.175±.007)
2.22
(.087)
(.087)
MIE-111A1
Package Dimensions
Unit: mm ( inches )
0.76±0.1
(.030±.004)
1.55±.02
(.061±.007)
4.5±0.1
(.177±.004)
12.7 MIN.
(.500)
CATHODE
Features
l
0.5 TYP.
(.020)
1.0 MIN.
(.039)
2.54 NOM.
(.100)
SEE NOTE 3
Selected to specific on-line intensity and
radiant intensity
l
Low cost, plastic side looking package
C
A
NOTES :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
@ T
A
=25
o
C
Parameter
Power Dissipation
Peak Forward Current
Continuos Forward Current
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Maximum Rating
75
1
50
5
-55
o
C to + 100
o
C
-55
o
C to + 100
o
C
260
o
C for 5 seconds
Unit
mW
A
mA
V
Unity Opto Technology Co., Ltd.
02/04/2002
UOT [ UNITY OPTO TECHNOLOGY ]
