GaAlAs/GaAs HIGH POWER SIDE LOOK PACKAGE
INFRARED EMITTING DIODE
Description
The MIE-114A1 is a GaAs infrared emitting diode
molded in clear, lensed side looking package .
The MIE-114A1 provides a broad range of
intensity selection .
5.72±0.2
(.225±.008)
4.45±0.20
(.175±.008)
2.22
(.087)
(.087)
1.22±0.10
(.048±.004)
MIE-114A1
Package Dimensions
Unit: mm ( inches )
0.76±0.10
(.030±.008)
1.55±0.02
(.061±.008)
12.7 MIN.
(.500)
Features
l
CATHODE
Selected to specific on-line intensity and
1.0 MIN.
(.040)
2.54 NOM.
(.100)
SEE NOTE 3
0.5 TYP.
(.020)
radiant intensity ranges
l
Low cost, plastic side looking package
l
Mechanically and spectrally matched to
the MID-11422 of phototransistor .
C
A
NOTES :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
@ T
A
=25
o
C
Parameter
Power Dissipation
Peak Forward Current(300pps,10µs pulse)
Continuos Forward Current
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Maximum Rating
75
1
50
5
-55
o
C to +100
o
C
-55
o
C to +100
o
C
260
o
C for 5 seconds
Unit
mW
A
mA
V
Unity Opto Technology Co., Ltd.
02/04/2002
UOT [ UNITY OPTO TECHNOLOGY ]
