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MIE-324H4 参数 Datasheet PDF下载

MIE-324H4图片预览
型号: MIE-324H4
PDF下载: 下载PDF文件 查看货源
内容描述: GaAlAs的T-1封装红外发光二极管 [GaAlAs T-1 PACKAGE INFRARED EMITTING DIODE]
分类和应用: 二极管
文件页数/大小: 2 页 / 34 K
品牌: UOT [ UNITY OPTO TECHNOLOGY ]
 浏览型号MIE-324H4的Datasheet PDF文件第2页  
GaAlAs T-1 PACKAGE
INFRARED EMITTING DIODE
Description
The MIE-324H4 is a GaAlAs infrared LED having a
peak wavelength at 850nm. It features ultra-high power,
high response speed and molded package with higher
radiant intensity. In addition to improving the S/N ratio
in applied optical systems, the MIE-324H4 has greatly
improved long-distance characteristics as well as sign-
ificantly increased its range of applicability .
SEE NOTE
φ
3.50±0.25
(.138±.010)
φ
3.10±0.20
(.122±.008)
4.10±0.20
(.161
±.008)
MIE-324H4
Package Dimensions
Unit : mm (inches )
5.20±0.30
(.205±.012)
4.00
(.157
24.00MIN
.
CATHODE
Features
l
l
l
l
0.50 TYP.
(.020)
Ultra-High radiant intensity
High response speed
Standard T-1 (
φ
3mm ) package, radiant angle : 40°
Peak wavelength
λ
p
= 850 nm
1.00MIN
.
(.040)
2.54NOM.
(.100)
SEE NOTE 3
A
C
Notes :
1. Tolerance is ±0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
@ T
A
=25
o
C
Parameter
Power Dissipation
Peak Forward Current(300pps,10µs pulse)
Continuos Forward Current
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Maximum Rating
120
1
100
5
-55
o
C to +100
o
C
-55
o
C to +100
o
C
260
o
C for 5 seconds
Unit
mW
A
mA
V
Unity Opto Technology Co., Ltd.
02/04/2002